Oxidation of Si1-yCy(0≤y≤0.02) strained layers grown on Si(001)
- authored by
- K. Pressel, M. Franz, D. Krüger, H. J. Osten, B. Garrido, J. R. Morante
- Abstract
We have studied wet thermal oxidation between 700 and 1100°C of strained Si1-yCy (0≤y ≤0.02) layers grown by molecular beam epitaxy on Si(001) substrates. The oxidation kinetics and the refractive indices of the oxides grown on Si1-yCy were monitored by ellipsometry. They show no significant differences in comparison with oxides grown on silicon. Secondary ion mass spectroscopy and x-ray photoelectron spectroscopy reveal the appearance of carbon in the oxide. To find an appropriate temperature window for oxidation, we investigated the underlying Si1-yCy layers after oxidation by infrared absorption measurements. We observed a decrease of the substitutional carbon concentration for oxidation temperatures higher than 800°C. Thus, only a small temperature window for the growth of good thermal oxide on Si1-yCy layers is available. Infrared absorption measurements on the oxide vibrational modes reveal a small influence of the carbon concentration on the structural quality of the oxide.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
Universitat de Barcelona
- Type
- Article
- Journal
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
- Volume
- 16
- Pages
- 1757-1761
- No. of pages
- 5
- ISSN
- 1071-1023
- Publication date
- 05.1998
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Condensed Matter Physics, Electrical and Electronic Engineering
