Spin quantum beats in semiconductors

authored by: Michael Oestreich, Sascha Hallstein, Wolfgang W. Rühle
Abstract: Spin quantum-beat spectroscopy is presented as a powerful tool for the investigation of the electron Landé g factor and the spin dynamics in bulk and low-dimensional semiconductors. The technique has several advantages including high sensitivity, broad applicability, and ease of implementation and, therefore, proves to be superior to other techniques as, e.g., the Hanle-effect, spin-flip Raman scattering, and conduction band spin-resonance. We demonstrate the utility of this technique by the study of the temperature dependence of the electron Landé g factor g* in GaAs up to room temperature. We present as well results on the temperature dependence of g* in InP, the dependence of g* on quantum film thickness in GaAs-AlGaAs heterostructures, and the anisotropy of g* in quantum films and wires. A modification of this technique yields the direction of the spin rotation, i.e., the sign of g*. Finally, recent results on spin quantum beats in microcavities will be presented.
External Organisation(s): Philipps-Universität Marburg
University of Kaiserslautern
Max Planck Institute for Solid State Research (MPI-FKF)
Type: Article
Journal: IEEE Journal on Selected Topics in Quantum Electronics
Volume: 2
Pages: 747-755
No. of pages: 9
ISSN: 1077-260X
Publication date: 09.1996
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
Electronic version(s): https://doi.org/10.1109/2944.571776 (Access: Unknown)

BibTeX

@article{31296a0db1a54908ae90733b37ac5c79,
title = "Spin quantum beats in semiconductors",
abstract = "Spin quantum-beat spectroscopy is presented as a powerful tool for the investigation of the electron Land{\'e} g factor and the spin dynamics in bulk and low-dimensional semiconductors. The technique has several advantages including high sensitivity, broad applicability, and ease of implementation and, therefore, proves to be superior to other techniques as, e.g., the Hanle-effect, spin-flip Raman scattering, and conduction band spin-resonance. We demonstrate the utility of this technique by the study of the temperature dependence of the electron Land{\'e} g factor g* in GaAs up to room temperature. We present as well results on the temperature dependence of g* in InP, the dependence of g* on quantum film thickness in GaAs-AlGaAs heterostructures, and the anisotropy of g* in quantum films and wires. A modification of this technique yields the direction of the spin rotation, i.e., the sign of g*. Finally, recent results on spin quantum beats in microcavities will be presented.",
author = "Michael Oestreich and Sascha Hallstein and R{\"u}hle, {Wolfgang W.}",
note = "Funding information: Manuscript received August 30, 1996; revised January 20, 1997. This work was supported by the Deutsche Forschungsgemeinschaft (Schwer-punktsprogramm Quantenkoh{\"a}renz in Halbleitern) and performed at the Max-Planck-Institut f{\"u}r Festk{\"o}rperforschung in Stuttgart. M. Oestreich and W. W. R{\"u}hle are with the Fachbereich Physik der Philipps-Universit{\"a}t, D-35032 Marburg, Germany. S. Hallstein is with the Max-Planck-Institut f{\"u}r Festk{\"o}rperforschung, D-70569 Stuttgart, Germany. Publisher Item Identifier S 1077-260X(96)09595-0.",
year = "1996",
month = sep,
doi = "10.1109/2944.571776",
language = "English",
volume = "2",
pages = "747--755",
journal = "IEEE Journal on Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}