Spin-reversed quasielectron excitations in the -filling fractional-quantum-Hall-effect state

authored by

S. Dorozhkin, M. Dorokhova, R. Haug

Abstract

We report on the effect of an in-plane magnetic field component on the magnetoresistance of the two-dimensional electron system (2DES) and capacitance between the 2DES and gate. The appearance of the ν=1/3 and ν=2/3 fractional-quantum-Hall-effect (FQHE) states has been observed to modify the effect at ν≳2/3. Our results imply the existence of the spin-reversed quasielectron excitations in the ν=2/3 FQHE. Charged excitations with large numbers of reversed spins (skyrmions) recently predicted for the ν=1/3 FQHE state have not been found.

External Organisation(s)

RAS - Institute of Solid State Physics
Max Planck Institute for Solid State Research (MPI-FKF)

Type

Article

Journal

Physical Review B - Condensed Matter and Materials Physics

Volume

55

Pages

4089-4092

No. of pages

4

ISSN

1098-0121

Publication date

01.01.1997

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

Electronic version(s)

https://doi.org/10.1103/PhysRevB.55.4089 (Access: Unknown)