Strained state of Ge(Si) islands on Si
Finite element calculations and comparison to convergent beam electron-diffraction measurements
- authored by
- S. Christiansen, M. Albrecht, H. P. Strunk, H. J. Maier
- Abstract
In this letter we present calculations by three-dimensional finite element method and measurements by convergent beam electron diffraction of the displacement field resulting from misfitting Ge0.85Si0.25 islands on Si(001). A good agreement between the results of both methods indicates that the three-dimensional finite element method is a reliable tool to calculate the strain, and thus the stress field, in such nanostructures. As a result both methods show that the substrate substantially takes part in the elastic relaxation process in such heteroepitaxial systems.
- External Organisation(s)
-
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU Erlangen-Nürnberg)
- Type
- Article
- Journal
- Applied physics letters
- Volume
- 64
- Pages
- 3617-3619
- No. of pages
- 3
- ISSN
- 0003-6951
- Publication date
- 1994
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic version(s)
-
https://doi.org/10.1063/1.111217 (Access:
Unknown)
