Kinetic suppression of islanding in impurity-mediated heteroepitaxial growth of germanium on silicon
- authored by
- H. J. Osten
- Abstract
The impurity-mediated suppression of islanding in molecular beam epitaxy growth experiments of Ge on Si(100) can be understood by a kinetic reduction of surface diffusion. Besides the energy barrier for surface diffusion, an energy barrier for a site exchange mechanism between Ge adatoms and the impurity atoms also has to be considered in a simple phenomenological approach that describes this effect. We found satisfactory agreement with different experimental results, like dependence of kinetic suppression of islanding on temperature and/or submonolayer coverage with impurities and germanium flux density.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Article
- Journal
- Applied physics letters
- Volume
- 64
- Pages
- 2356-2358
- No. of pages
- 3
- ISSN
- 0003-6951
- Publication date
- 02.05.1994
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic version(s)
-
https://doi.org/10.1063/1.111613 (Access:
Closed)
