Kinetic suppression of islanding in impurity-mediated heteroepitaxial growth of germanium on silicon

verfasst von

H. J. Osten

Abstract

The impurity-mediated suppression of islanding in molecular beam epitaxy growth experiments of Ge on Si(100) can be understood by a kinetic reduction of surface diffusion. Besides the energy barrier for surface diffusion, an energy barrier for a site exchange mechanism between Ge adatoms and the impurity atoms also has to be considered in a simple phenomenological approach that describes this effect. We found satisfactory agreement with different experimental results, like dependence of kinetic suppression of islanding on temperature and/or submonolayer coverage with impurities and germanium flux density.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Applied physics letters

Band

64

Seiten

2356-2358

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

02.05.1994

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.111613 (Zugang: Geschlossen)