Very low surface recombination velocities on p - and n -type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
- authored by
- Florian Werner, Boris Veith, Veronica Tiba, Paul Poodt, Fred Roozeboom, Rolf Brendel, Jan Schmidt
- Abstract
Using aluminum oxide (Al2 O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p -type and 8.1 cm/s on n -type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to <2 nm/min. The excellent passivation level is predominantly assigned to a high negative fixed charge density of Qf =- (4±1) × 1012 cm-2 in the Al2 O3 films. We demonstrate an excellent thermal stability of the passivation quality.
- External Organisation(s)
-
Institute for Solar Energy Research (ISFH)
SoLayTec
Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek (TNO)
Eindhoven University of Technology (TU/e)
- Type
- Article
- Journal
- Applied physics letters
- Volume
- 97
- ISSN
- 0003-6951
- Publication date
- 18.10.2010
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic version(s)
-
https://doi.org/10.1063/1.3505311 (Access:
Closed)
