Very low surface recombination velocities on p - and n -type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
- verfasst von
- Florian Werner, Boris Veith, Veronica Tiba, Paul Poodt, Fred Roozeboom, Rolf Brendel, Jan Schmidt
- Abstract
Using aluminum oxide (Al2 O3) films deposited by high-rate spatial atomic layer deposition (ALD), we achieve very low surface recombination velocities of 6.5 cm/s on p -type and 8.1 cm/s on n -type crystalline silicon wafers. Using spatially separated reaction zones instead of the conventional time-sequenced precursor dosing enables growth rates up to 70 nm/min, whereas conventional ALD limits the growth rate to <2 nm/min. The excellent passivation level is predominantly assigned to a high negative fixed charge density of Qf =- (4±1) × 1012 cm-2 in the Al2 O3 films. We demonstrate an excellent thermal stability of the passivation quality.
- Externe Organisation(en)
-
Institut für Solarenergieforschung GmbH (ISFH)
SoLayTec
Niederländische Organisation für Angewandte Naturwissenschaftliche Forschung (TNO)
Eindhoven University of Technology (TU/e)
- Typ
- Artikel
- Journal
- Applied physics letters
- Band
- 97
- ISSN
- 0003-6951
- Publikationsdatum
- 18.10.2010
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Physik und Astronomie (sonstige)
- Elektronische Version(en)
-
https://doi.org/10.1063/1.3505311 (Zugang:
Geschlossen)
