Downscaling of defect-passivated Gd₂O₃ thin films on p-Si(0 0 1) wafers grown by H₂O-assisted atomic layer deposition

authored by

R. Ranjith, A. Laha, E. Bugiel, H. J. Osten, K. Xu, A. P. Milanov, A. Devi

Abstract

Crystalline thin films of Gd₂O₃ of varying thicknesses were grown on 2 inch p-Si(1 0 0) wafers by H₂O-assisted atomic layer deposition (ALD) using a homoleptic gadolinium tris-guanidinate precursor [Gd(ⁱPr-Me₂N-Guan)₃]. The Gd ₂O₃ layers grown at 225 °C were polycrystalline with columnar growth morphology. The as-grown films were electrically characterized as a metal oxide semiconductor (MOS) capacitor and exhibited instability in the flat-band voltage. Upon subjection to post-deposition defect-passivation treatment, they exhibited promising electrical characteristics. More importantly, the vertical downscaling of Gd₂O₃ thin films through the H₂O-assisted ALD process could be realized through the capacitance equivalent thickness versus physical thickness studies.

Organisation(s)

Institute of Electronic Materials and Devices

External Organisation(s)

Ruhr-Universität Bochum

Type

Article

Journal

Semiconductor Science and Technology

Volume

25

ISSN

0268-1242

Publication date

09.09.2010

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

Electronic version(s)

https://doi.org/10.1088/0268-1242/25/10/105001 (Access: Closed)