Downscaling of defect-passivated Gd₂O₃ thin films on p-Si(0 0 1) wafers grown by H₂O-assisted atomic layer deposition

verfasst von

R. Ranjith, A. Laha, E. Bugiel, H. J. Osten, K. Xu, A. P. Milanov, A. Devi

Abstract

Crystalline thin films of Gd₂O₃ of varying thicknesses were grown on 2 inch p-Si(1 0 0) wafers by H₂O-assisted atomic layer deposition (ALD) using a homoleptic gadolinium tris-guanidinate precursor [Gd(ⁱPr-Me₂N-Guan)₃]. The Gd ₂O₃ layers grown at 225 °C were polycrystalline with columnar growth morphology. The as-grown films were electrically characterized as a metal oxide semiconductor (MOS) capacitor and exhibited instability in the flat-band voltage. Upon subjection to post-deposition defect-passivation treatment, they exhibited promising electrical characteristics. More importantly, the vertical downscaling of Gd₂O₃ thin films through the H₂O-assisted ALD process could be realized through the capacitance equivalent thickness versus physical thickness studies.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik

Externe Organisation(en)

Ruhr-Universität Bochum

Typ

Artikel

Journal

Semiconductor Science and Technology

Band

25

ISSN

0268-1242

Publikationsdatum

09.09.2010

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Elektrotechnik und Elektronik, Werkstoffchemie

Elektronische Version(en)

https://doi.org/10.1088/0268-1242/25/10/105001 (Zugang: Geschlossen)