Epitaxial multi-component rare-earth oxide
A high-k material with ultralow mismatch to Si
- authored by
- Jinxing Wang, Tianmo Liu, Zhongchang Wang, Eberhard Bugiel, Apurba Laha, Tatsuro Watahiki, Roman Shayduk, Wolfgang Braun, Andreas Fissel, Hans Jörg Osten
- Abstract
New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
- Organisation(s)
-
Institute of Electronic Materials and Devices
Laboratorium f. Informationstechnologie
- External Organisation(s)
-
Chongqing University
Tohoku University
Paul-Drude-Institut für Festkörperelektronik (PDI)
- Type
- Article
- Journal
- Materials letters
- Volume
- 64
- Pages
- 866-868
- No. of pages
- 3
- ISSN
- 0167-577X
- Publication date
- 15.04.2010
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Materials Science, Condensed Matter Physics, Mechanics of Materials, Mechanical Engineering
- Electronic version(s)
-
https://doi.org/10.1016/j.matlet.2010.01.045 (Access:
Closed)
