Epitaxial multi-component rare-earth oxide

A high-k material with ultralow mismatch to Si

verfasst von

Jinxing Wang, Tianmo Liu, Zhongchang Wang, Eberhard Bugiel, Apurba Laha, Tatsuro Watahiki, Roman Shayduk, Wolfgang Braun, Andreas Fissel, Hans Jörg Osten

Abstract

New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (Gd_xNd_{1 - x})₂O₃ (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik
Laboratorium f. Informationstechnologie

Externe Organisation(en)

Chongqing University
Tohoku University
Paul-Drude-Institut für Festkörperelektronik (PDI)

Typ

Artikel

Journal

Materials letters

Band

64

Seiten

866-868

Anzahl der Seiten

3

ISSN

0167-577X

Publikationsdatum

15.04.2010

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Materialwissenschaften, Physik der kondensierten Materie, Werkstoffmechanik, Maschinenbau

Elektronische Version(en)

https://doi.org/10.1016/j.matlet.2010.01.045 (Zugang: Geschlossen)