Lifetimes in aluminum-doped silicon

authored by

Jan Schmidt, Nils Thiemann, Robert Bock, Rolf Brendel

Abstract

The carrier lifetimes in screen-printed Al-p⁺ regions are shown to be 3 orders of magnitude larger than the values expected from the extrapolation of the lifetime data measured on Al-doped Czochralski-grown silicon wafers. Device simulations show that the lifetime of 130 ns measured in Al-p⁺ regions enable open-circuit voltages of 670 mV and efficiencies of 21% on n-type silicon wafers. These results prove that the efficiency potential of screen-printed Al-p⁺ emitters for the application to rear-junction n-type cells is much higher than traditionally assumed.

External Organisation(s)

Institute for Solar Energy Research (ISFH)

Type

Conference contribution

Pages

1732-1735

No. of pages

4

Publication date

2009

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Control and Systems Engineering, Industrial and Manufacturing Engineering, Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1109/PVSC.2009.5411443 (Access: Closed)