Strain induced interface roughness of Si_{1 - X}C_x δ layers on Si(001)

authored by

J. Falta, D. Bahr, A. Hille, G. Materlik, H. J. Osten

Abstract

Ultra thin buried Si_{1 - x}C_x films (δ layers) of monolayer thickness and high carbon concentration (x > 0.1) in a Si matrix have been prepared by molecular beam epitaxy and were structurally characterized by high resolution x-ray diffraction, i.e., measurements of crystal truncation rods. The average interface roughness of the δ layers is in the order of 6-10 Å. A larger carbon deposit results in the formation of thicker Si_{1 - x}C_x δ layers with lower carbon concentrations and smoother interfaces. This effect is attributed to a reduction of the strain in the δ layer due to the lower carbon concentration.

External Organisation(s)

Deutsches Elektronen-Synchrotron (DESY)
Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Applied physics letters

Volume

71

Pages

3525-3527

No. of pages

3

ISSN

0003-6951

Publication date

15.12.1997

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.120380 (Access: Closed)