Strain induced interface roughness of Si_{1 - X}C_x δ layers on Si(001)

verfasst von

J. Falta, D. Bahr, A. Hille, G. Materlik, H. J. Osten

Abstract

Ultra thin buried Si_{1 - x}C_x films (δ layers) of monolayer thickness and high carbon concentration (x > 0.1) in a Si matrix have been prepared by molecular beam epitaxy and were structurally characterized by high resolution x-ray diffraction, i.e., measurements of crystal truncation rods. The average interface roughness of the δ layers is in the order of 6-10 Å. A larger carbon deposit results in the formation of thicker Si_{1 - x}C_x δ layers with lower carbon concentrations and smoother interfaces. This effect is attributed to a reduction of the strain in the δ layer due to the lower carbon concentration.

Externe Organisation(en)

Deutsches Elektronen-Synchrotron (DESY)
Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Applied physics letters

Band

71

Seiten

3525-3527

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

15.12.1997

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.120380 (Zugang: Geschlossen)