Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers
- authored by
- H. J. Osten, G. Lippert, P. Gaworzewski, R. Sorge
- Abstract
We present results on the effect of carbon coevaporation by molecular beam epitaxy on electrical properties of highly boron doped SiGe:C layers for C concentration of around 1020 cm-3. Such C concentrations are needed for substantial suppression of boron outdiffusion. The concentration of electrically active boron and the hole mobility are not affected by the addition of carbon. Carbon-related defects, typically observed for C concentrations below the bulk solid solubility limit (<1018 cm-3), do not significantly reduce the concentration of electrically active B in SiGe:C. However, carbon coevaporation affects carrier lifetimes. The generation lifetime is reduced by more than one order of magnitude in SiGe:C compared with analogous SiGe layers.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Article
- Journal
- Applied physics letters
- Volume
- 71
- Pages
- 1522-1524
- No. of pages
- 3
- ISSN
- 0003-6951
- Publication date
- 15.09.1997
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Electronic version(s)
-
https://doi.org/10.1063/1.119955 (Access:
Closed)
