Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers
- verfasst von
- H. J. Osten, G. Lippert, P. Gaworzewski, R. Sorge
- Abstract
We present results on the effect of carbon coevaporation by molecular beam epitaxy on electrical properties of highly boron doped SiGe:C layers for C concentration of around 1020 cm-3. Such C concentrations are needed for substantial suppression of boron outdiffusion. The concentration of electrically active boron and the hole mobility are not affected by the addition of carbon. Carbon-related defects, typically observed for C concentrations below the bulk solid solubility limit (<1018 cm-3), do not significantly reduce the concentration of electrically active B in SiGe:C. However, carbon coevaporation affects carrier lifetimes. The generation lifetime is reduced by more than one order of magnitude in SiGe:C compared with analogous SiGe layers.
- Externe Organisation(en)
-
Leibniz-Institut für innovative Mikroelektronik (IHP)
- Typ
- Artikel
- Journal
- Applied physics letters
- Band
- 71
- Seiten
- 1522-1524
- Anzahl der Seiten
- 3
- ISSN
- 0003-6951
- Publikationsdatum
- 15.09.1997
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Physik und Astronomie (sonstige)
- Elektronische Version(en)
-
https://doi.org/10.1063/1.119955 (Zugang:
Geschlossen)
