Single-electron effects in slim semiconductor superlattices

authored by

T. Schmidt, R. J. Haug, K. V. Klitzing, K. Eberl

Abstract

We fabricated laterally confined GaAs-AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current-voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)

Type

Article

Journal

Applied physics letters

Volume

73

Pages

1982-1984

No. of pages

3

ISSN

0003-6951

Publication date

01.12.1998

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.122342 (Access: Unknown)