Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions

authored by: W. Kissinger, H. J. Osten, G. Lippert, B. Dietrich, E. Bugiel
Abstract: The influence of molecular-beam-epitaxy growth conditions on the properties of five monolayers of germanium, embedded in a (001) silicon matrix for a conventional as well as an antimony-mediated growth in the temperature region from 300 to 450 °C, was investigated. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy; they show compatible results for all three methods of investigation. For growth without antimony, a tendency toward segregation-induced alloying with increasing growth temperatures was observed. Antimony-mediated growth experiments show that the surfactant is able to improve the bulk character of the germanium layer at higher temperatures only, while it does not significantly influence the layer growth at lower temperatures. Among all investigated growth conditions the best sharpness of the germanium layer interface was found for the antimony-mediated growth at 450 °C. An annealing after growth at increasing temperatures increased the alloying by an interdiffusion of Si and Ge as indicated by Raman measurements. In ER a vanishing of the Ge-like transitions was observed after a treatment at temperatures between 600 and 700 °C for 15 min.
External Organisation(s): Leibniz Institute for High Performance Microelectronics (IHP)
Type: Article
Journal: Journal of applied physics
Volume: 76
Pages: 8042-8047
No. of pages: 6
ISSN: 0021-8979
Publication date: 15.12.1994
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: General Physics and Astronomy
Electronic version(s): https://doi.org/10.1063/1.357924 (Access: Closed)

BibTeX

@article{8289909522de47d3934f296885afa8ad,
title = "Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions",
abstract = "The influence of molecular-beam-epitaxy growth conditions on the properties of five monolayers of germanium, embedded in a (001) silicon matrix for a conventional as well as an antimony-mediated growth in the temperature region from 300 to 450 °C, was investigated. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy; they show compatible results for all three methods of investigation. For growth without antimony, a tendency toward segregation-induced alloying with increasing growth temperatures was observed. Antimony-mediated growth experiments show that the surfactant is able to improve the bulk character of the germanium layer at higher temperatures only, while it does not significantly influence the layer growth at lower temperatures. Among all investigated growth conditions the best sharpness of the germanium layer interface was found for the antimony-mediated growth at 450 °C. An annealing after growth at increasing temperatures increased the alloying by an interdiffusion of Si and Ge as indicated by Raman measurements. In ER a vanishing of the Ge-like transitions was observed after a treatment at temperatures between 600 and 700 °C for 15 min.",
author = "W. Kissinger and Osten, {H. J.} and G. Lippert and B. Dietrich and E. Bugiel",
year = "1994",
month = dec,
day = "15",
doi = "10.1063/1.357924",
language = "English",
volume = "76",
pages = "8042--8047",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "12",
}