Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions

verfasst von: W. Kissinger, H. J. Osten, G. Lippert, B. Dietrich, E. Bugiel
Abstract: The influence of molecular-beam-epitaxy growth conditions on the properties of five monolayers of germanium, embedded in a (001) silicon matrix for a conventional as well as an antimony-mediated growth in the temperature region from 300 to 450 °C, was investigated. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy; they show compatible results for all three methods of investigation. For growth without antimony, a tendency toward segregation-induced alloying with increasing growth temperatures was observed. Antimony-mediated growth experiments show that the surfactant is able to improve the bulk character of the germanium layer at higher temperatures only, while it does not significantly influence the layer growth at lower temperatures. Among all investigated growth conditions the best sharpness of the germanium layer interface was found for the antimony-mediated growth at 450 °C. An annealing after growth at increasing temperatures increased the alloying by an interdiffusion of Si and Ge as indicated by Raman measurements. In ER a vanishing of the Ge-like transitions was observed after a treatment at temperatures between 600 and 700 °C for 15 min.
Externe Organisation(en): Leibniz-Institut für innovative Mikroelektronik (IHP)
Typ: Artikel
Journal: Journal of applied physics
Band: 76
Seiten: 8042-8047
Anzahl der Seiten: 6
ISSN: 0021-8979
Publikationsdatum: 15.12.1994
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Allgemeine Physik und Astronomie
Elektronische Version(en): https://doi.org/10.1063/1.357924 (Zugang: Geschlossen)

BibTeX

@article{8289909522de47d3934f296885afa8ad,
title = "Dependence of the interface sharpness of a Ge single quantum well on molecular-beam-epitaxial growth conditions",
abstract = "The influence of molecular-beam-epitaxy growth conditions on the properties of five monolayers of germanium, embedded in a (001) silicon matrix for a conventional as well as an antimony-mediated growth in the temperature region from 300 to 450 °C, was investigated. The layers were analyzed by electroreflectance (ER), Raman spectroscopy, and transmission electron microscopy; they show compatible results for all three methods of investigation. For growth without antimony, a tendency toward segregation-induced alloying with increasing growth temperatures was observed. Antimony-mediated growth experiments show that the surfactant is able to improve the bulk character of the germanium layer at higher temperatures only, while it does not significantly influence the layer growth at lower temperatures. Among all investigated growth conditions the best sharpness of the germanium layer interface was found for the antimony-mediated growth at 450 °C. An annealing after growth at increasing temperatures increased the alloying by an interdiffusion of Si and Ge as indicated by Raman measurements. In ER a vanishing of the Ge-like transitions was observed after a treatment at temperatures between 600 and 700 °C for 15 min.",
author = "W. Kissinger and Osten, {H. J.} and G. Lippert and B. Dietrich and E. Bugiel",
year = "1994",
month = dec,
day = "15",
doi = "10.1063/1.357924",
language = "English",
volume = "76",
pages = "8042--8047",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "12",
}