Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant

authored by

H. J. Osten, J. Klatt, G. Lippert, E. Bugiel, S. Hinrich

Abstract

Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Applied physics letters

Volume

60

Pages

2522-2524

No. of pages

3

ISSN

0003-6951

Publication date

18.05.1992

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.106926 (Access: Closed)