Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant

verfasst von

H. J. Osten, J. Klatt, G. Lippert, E. Bugiel, S. Hinrich

Abstract

Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Applied physics letters

Band

60

Seiten

2522-2524

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

18.05.1992

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.106926 (Zugang: Geschlossen)