Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd₂O₃

authored by

V. V. Afanas'ev, M. Badylevich, A. Stesmans, A. Laha, H. J. Osten, A. Fissel

Abstract

Silicon nanocrystals embedded in a lattice-matched Gd₂ O ₃ matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.

Organisation(s)

Institute of Electronic Materials and Devices
Laboratorium f. Informationstechnologie

External Organisation(s)

KU Leuven

Type

Article

Journal

Applied physics letters

Volume

95

ISSN

0003-6951

Publication date

07.09.2009

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.3204019 (Access: Closed)