Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd₂O₃

verfasst von

V. V. Afanas'ev, M. Badylevich, A. Stesmans, A. Laha, H. J. Osten, A. Fissel

Abstract

Silicon nanocrystals embedded in a lattice-matched Gd₂ O ₃ matrix exhibit large size-dependent bandgap widening. Measurements of photocharging spectra of these crystals indicate only a marginal variation in the photoionization threshold energy. The latter suggests that most of the confinement-induced bandgap width variation is caused by the upward shift of the Si nanocrystal conduction band bottom.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik
Laboratorium f. Informationstechnologie

Externe Organisation(en)

KU Leuven

Typ

Artikel

Journal

Applied physics letters

Band

95

ISSN

0003-6951

Publikationsdatum

07.09.2009

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.3204019 (Zugang: Geschlossen)