Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si

authored by

H. Rücker, M. Methfessel, E. Bugiel, H. J. Osten

Abstract

We present evidence that Si1-xCx layers with x0.20 can be grown pseudomorphically on a Si (001) substrate despite the large difference of the C and Si lattice constants. Calculations based on density-functional theory and a Keating model predict that embedded layers of certain structures with stoichiometry Sin-1C where n=5,6,... are considerably more stable than isolated C impurities. The common feature of these structures is that the carbon atoms tend to arrange as third-nearest neighbors. Multilayer structures grown by molecular beam epitaxy strongly suggest that defect-free heterostructures with such high C concentrations can be fabricated.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Physical review letters

Volume

72

Pages

3578-3581

No. of pages

4

ISSN

0031-9007

Publication date

1994

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

General Physics and Astronomy

Electronic version(s)

https://doi.org/10.1103/PhysRevLett.72.3578 (Access: Closed)