Strain-stabilized highly concentrated pseudomorphic Si1-xCx layers in Si

verfasst von

H. Rücker, M. Methfessel, E. Bugiel, H. J. Osten

Abstract

We present evidence that Si1-xCx layers with x0.20 can be grown pseudomorphically on a Si (001) substrate despite the large difference of the C and Si lattice constants. Calculations based on density-functional theory and a Keating model predict that embedded layers of certain structures with stoichiometry Sin-1C where n=5,6,... are considerably more stable than isolated C impurities. The common feature of these structures is that the carbon atoms tend to arrange as third-nearest neighbors. Multilayer structures grown by molecular beam epitaxy strongly suggest that defect-free heterostructures with such high C concentrations can be fabricated.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)

Typ

Artikel

Journal

Physical review letters

Band

72

Seiten

3578-3581

Anzahl der Seiten

4

ISSN

0031-9007

Publikationsdatum

1994

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Elektronische Version(en)

https://doi.org/10.1103/PhysRevLett.72.3578 (Zugang: Geschlossen)