Lateral inhomogeneous boron segregation during silicon thin film growth with molecular beam epitaxy

authored by

D. Krüger, G. Lippert, R. Kurps, H. J. Osten

Abstract

Boron segregation from submonolayer (less than 0.1 monolayer) interfacial boron deposition during thin film silicon growth with molecular beam epitaxy (MBE) in the temperature range 450 to 800°C has been investigated by secondary ion mass spectrometry (SIMS) with high depth resolution abd lateral resolution of a few micrometer. Beginning at 600°C, segregation-induced "kinks" occur in the boron profiles developing into shoulders for higher growth temperatures and/or lower deposition rates. At temperatures above 700°C at the shoulder a concentration of (1-2) × 10¹⁹ cm^-3 was found. Interfacial carbon showing significantly less segregation has been used as a marker. Laterally resolved SIMS measurements indicate inhomogeneous boron distribution, mainly due to residual substrate contamination. These inhomogeneities strongly influence the segregation behaviour, as shown by SIMS cross-section analysis, and can result in local boron penetration through multilayer structures, demonstrating the importance of appropriate cleaning procedures for residual boron substrate contamination.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)

Type

Article

Journal

Journal of crystal growth

Volume

135

Pages

246-252

No. of pages

7

ISSN

0022-0248

Publication date

01.1994

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Condensed Matter Physics, Inorganic Chemistry, Materials Chemistry

Electronic version(s)

https://doi.org/10.1016/0022-0248(94)90747-1 (Access: Closed)