Lateral inhomogeneous boron segregation during silicon thin film growth with molecular beam epitaxy

verfasst von: D. Krüger, G. Lippert, R. Kurps, H. J. Osten
Abstract: Boron segregation from submonolayer (less than 0.1 monolayer) interfacial boron deposition during thin film silicon growth with molecular beam epitaxy (MBE) in the temperature range 450 to 800°C has been investigated by secondary ion mass spectrometry (SIMS) with high depth resolution abd lateral resolution of a few micrometer. Beginning at 600°C, segregation-induced "kinks" occur in the boron profiles developing into shoulders for higher growth temperatures and/or lower deposition rates. At temperatures above 700°C at the shoulder a concentration of (1-2) × 10¹⁹ cm^-3 was found. Interfacial carbon showing significantly less segregation has been used as a marker. Laterally resolved SIMS measurements indicate inhomogeneous boron distribution, mainly due to residual substrate contamination. These inhomogeneities strongly influence the segregation behaviour, as shown by SIMS cross-section analysis, and can result in local boron penetration through multilayer structures, demonstrating the importance of appropriate cleaning procedures for residual boron substrate contamination.
Externe Organisation(en): Leibniz-Institut für innovative Mikroelektronik (IHP)
Typ: Artikel
Journal: Journal of crystal growth
Band: 135
Seiten: 246-252
Anzahl der Seiten: 7
ISSN: 0022-0248
Publikationsdatum: 01.1994
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1016/0022-0248(94)90747-1 (Zugang: Geschlossen)

BibTeX

@article{533725b562cf4e82a19ff0fb2dfb9f3f,
title = "Lateral inhomogeneous boron segregation during silicon thin film growth with molecular beam epitaxy",
abstract = "Boron segregation from submonolayer (less than 0.1 monolayer) interfacial boron deposition during thin film silicon growth with molecular beam epitaxy (MBE) in the temperature range 450 to 800°C has been investigated by secondary ion mass spectrometry (SIMS) with high depth resolution abd lateral resolution of a few micrometer. Beginning at 600°C, segregation-induced {"}kinks{"} occur in the boron profiles developing into shoulders for higher growth temperatures and/or lower deposition rates. At temperatures above 700°C at the shoulder a concentration of (1-2) × 1019 cm-3 was found. Interfacial carbon showing significantly less segregation has been used as a marker. Laterally resolved SIMS measurements indicate inhomogeneous boron distribution, mainly due to residual substrate contamination. These inhomogeneities strongly influence the segregation behaviour, as shown by SIMS cross-section analysis, and can result in local boron penetration through multilayer structures, demonstrating the importance of appropriate cleaning procedures for residual boron substrate contamination.",
author = "D. Kr{\"u}ger and G. Lippert and R. Kurps and Osten, {H. J.}",
year = "1994",
month = jan,
doi = "10.1016/0022-0248(94)90747-1",
language = "English",
volume = "135",
pages = "246--252",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-2",
}