Tailoring the properties of semiconductor nanowires using ion beams

authored by: C. Ronning, C. Borschel, S. Geburt, R. Niepelt, S. Müller, D. Stichtenoth, J. P. Richters, A. Dev, T. Voss, L. Chen, W. Heimbrodt, C. Gutsche, W. Prost
Abstract: This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as 'negative' described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.
External Organisation(s): Friedrich Schiller University Jena
University of Göttingen
University of Bremen
Philipps-Universität Marburg
University of Duisburg-Essen
Type: Article
Journal: Physica Status Solidi (B) Basic Research
Volume: 247
Pages: 2329-2337
No. of pages: 9
ISSN: 0370-1972
Publication date: 10.2010
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Electronic version(s): https://doi.org/10.1002/pssb.201046192 (Access: Closed)

BibTeX

@article{4fd23b126c2c4357b9b1a29e29125c00,
title = "Tailoring the properties of semiconductor nanowires using ion beams",
abstract = "This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as 'negative' described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.",
keywords = "Defects, Ion beams, Nanowires",
author = "C. Ronning and C. Borschel and S. Geburt and R. Niepelt and S. M{\"u}ller and D. Stichtenoth and Richters, {J. P.} and A. Dev and T. Voss and L. Chen and W. Heimbrodt and C. Gutsche and W. Prost",
year = "2010",
month = oct,
doi = "10.1002/pssb.201046192",
language = "English",
volume = "247",
pages = "2329--2337",
journal = "Physica Status Solidi (B) Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "10",
}