Tailoring the properties of semiconductor nanowires using ion beams

verfasst von: C. Ronning, C. Borschel, S. Geburt, R. Niepelt, S. Müller, D. Stichtenoth, J. P. Richters, A. Dev, T. Voss, L. Chen, W. Heimbrodt, C. Gutsche, W. Prost
Abstract: This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as 'negative' described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.
Externe Organisation(en): Friedrich-Schiller-Universität Jena
Georg-August-Universität Göttingen
Universität Bremen
Philipps-Universität Marburg
Universität Duisburg-Essen
Typ: Artikel
Journal: Physica Status Solidi (B) Basic Research
Band: 247
Seiten: 2329-2337
Anzahl der Seiten: 9
ISSN: 0370-1972
Publikationsdatum: 10.2010
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie
Elektronische Version(en): https://doi.org/10.1002/pssb.201046192 (Zugang: Geschlossen)

BibTeX

@article{4fd23b126c2c4357b9b1a29e29125c00,
title = "Tailoring the properties of semiconductor nanowires using ion beams",
abstract = "This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as 'negative' described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.",
keywords = "Defects, Ion beams, Nanowires",
author = "C. Ronning and C. Borschel and S. Geburt and R. Niepelt and S. M{\"u}ller and D. Stichtenoth and Richters, {J. P.} and A. Dev and T. Voss and L. Chen and W. Heimbrodt and C. Gutsche and W. Prost",
year = "2010",
month = oct,
doi = "10.1002/pssb.201046192",
language = "English",
volume = "247",
pages = "2329--2337",
journal = "Physica Status Solidi (B) Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "10",
}