Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te

authored by

H. J. Osten, J. Klatt, G. Lippert, E. Bugiel, S. Higuchi

Abstract

Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverages of antimony and tellurium, respectively, was investigated with reflection high-energy electron diffraction and transmission electron microscopy. Approximately 0.2 monolayer of antimony is needed for a complete suppression of islanding for the growth at 450 °C. For growth at a lower temperature (270 °C), only approximately 10% of a monolayer antimony or tellurium is needed in order to obtain smooth epitaxial germanium layers. No differences could be detected between tellurium and antimony in the behavior as a surfactant. The performed surfactant-mediated growth experiments can be understood as the kinetic suppression of islanding due to a reduction in surface diffusion of germanium adatoms.

External Organisation(s)

Leibniz Institute for High Performance Microelectronics (IHP)
Tosoh Corporation

Type

Article

Journal

Journal of applied physics

Volume

74

Pages

2507-2511

No. of pages

5

ISSN

0021-8979

Publication date

15.08.1993

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

General Physics and Astronomy

Electronic version(s)

https://doi.org/10.1063/1.354690 (Access: Closed)