Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverage of Sb and Te

verfasst von

H. J. Osten, J. Klatt, G. Lippert, E. Bugiel, S. Higuchi

Abstract

Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverages of antimony and tellurium, respectively, was investigated with reflection high-energy electron diffraction and transmission electron microscopy. Approximately 0.2 monolayer of antimony is needed for a complete suppression of islanding for the growth at 450 °C. For growth at a lower temperature (270 °C), only approximately 10% of a monolayer antimony or tellurium is needed in order to obtain smooth epitaxial germanium layers. No differences could be detected between tellurium and antimony in the behavior as a surfactant. The performed surfactant-mediated growth experiments can be understood as the kinetic suppression of islanding due to a reduction in surface diffusion of germanium adatoms.

Externe Organisation(en)

Leibniz-Institut für innovative Mikroelektronik (IHP)
Tosoh Corporation

Typ

Artikel

Journal

Journal of applied physics

Band

74

Seiten

2507-2511

Anzahl der Seiten

5

ISSN

0021-8979

Publikationsdatum

15.08.1993

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Allgemeine Physik und Astronomie

Elektronische Version(en)

https://doi.org/10.1063/1.354690 (Zugang: Geschlossen)