Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin
- authored by
- H. J. Osten, G. Lippert, D. Knoll, R. Barth, B. Heinemann, H. Ruecker, P. Schley
- Abstract
We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak fT/fmax values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.
- External Organisation(s)
-
Leibniz Institute for High Performance Microelectronics (IHP)
- Type
- Conference article
- Journal
- Technical Digest - International Electron Devices Meeting, IEDM
- Pages
- 803-806
- No. of pages
- 4
- ISSN
- 0163-1918
- Publication date
- 1997
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry
