Experimental determination of the quasiparticle charge and the energy gap in the fractional quantum Hall effect

authored by

S. I. Dorozhkin, R. J. Haug, K. Von Klitzing, K. Ploog

Abstract

We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.

External Organisation(s)

RAS - Institute of Solid State Physics
Max Planck Institute for Solid State Research (MPI-FKF)
Paul-Drude-Institut für Festkörperelektronik (PDI)

Type

Article

Journal

Physical Review B

Volume

51

Pages

14729-14732

No. of pages

4

ISSN

0163-1829

Publication date

15.05.1995

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Condensed Matter Physics

Electronic version(s)

https://doi.org/10.1103/PhysRevB.51.14729 (Access: Closed)
https://doi.org/10.1103/PhysRevB.53.10411 (Access: Closed)