Experimental determination of the quasiparticle charge and the energy gap in the fractional quantum Hall effect

verfasst von: S. I. Dorozhkin, R. J. Haug, K. Von Klitzing, K. Ploog
Abstract: We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.
Externe Organisation(en): RAS - Institute of Solid State Physics
Max-Planck-Institut für Festkörperforschung
Paul-Drude-Institut für Festkörperelektronik (PDI)
Typ: Artikel
Journal: Physical Review B
Band: 51
Seiten: 14729-14732
Anzahl der Seiten: 4
ISSN: 0163-1829
Publikationsdatum: 15.05.1995
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie
Elektronische Version(en): https://doi.org/10.1103/PhysRevB.51.14729 (Zugang: Geschlossen)
https://doi.org/10.1103/PhysRevB.53.10411 (Zugang: Geschlossen)

BibTeX

@article{378daa61f9d84bf69b461b369b2fac3e,
title = "Experimental determination of the quasiparticle charge and the energy gap in the fractional quantum Hall effect",
abstract = "We have studied the energy gap in the 1/3-filling fractional quantum Hall effect state in GaAs/AlxGa1-xAs heterojunctions with a carrier concentration tuned by a gate voltage. We have measured in situ (i) a fractional signature in a capacitance between a two-dimensional electron system and a metal gate, and (ii) the activation energy of magnetoresistance. From the capacitance data, using recently proposed assumptions, we have evaluated the chemical potential discontinuity in the 1/3-filling state. It turned out to be in good agreement with a value expected from the measured activation energy under the assumption of the fractional quasiparticle charge e*=±e/3. This result suggests that the approach used can be employed to determine absolute values of both the energy gap and the fractional quasiparticle charge.",
author = "Dorozhkin, {S. I.} and Haug, {R. J.} and {Von Klitzing}, K. and K. Ploog",
year = "1995",
month = may,
day = "15",
doi = "10.1103/PhysRevB.51.14729",
language = "English",
volume = "51",
pages = "14729--14732",
journal = "Physical Review B",
issn = "0163-1829",
publisher = "American Institute of Physics",
number = "20",
}