Realization of an in-plane-gate single-electron transistor

authored by

H. Pothier, J. Weis, R. J. Haug, K. V. Klitzing, K. Ploog

Abstract

By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.

External Organisation(s)

Max Planck Institute for Solid State Research (MPI-FKF)
Paul-Drude-Institut für Festkörperelektronik (PDI)

Type

Article

Journal

Applied physics letters

Volume

62

Pages

3174-3176

No. of pages

3

ISSN

0003-6951

Publication date

01.12.1993

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.109120 (Access: Unknown)