Realization of an in-plane-gate single-electron transistor

verfasst von

H. Pothier, J. Weis, R. J. Haug, K. V. Klitzing, K. Ploog

Abstract

By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.

Externe Organisation(en)

Max-Planck-Institut für Festkörperforschung
Paul-Drude-Institut für Festkörperelektronik (PDI)

Typ

Artikel

Journal

Applied physics letters

Band

62

Seiten

3174-3176

Anzahl der Seiten

3

ISSN

0003-6951

Publikationsdatum

01.12.1993

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1063/1.109120 (Zugang: Unbekannt)