Influence of Sb induced surface faceting on structural properties of relaxed Ge films on Si(001)

authored by

T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann

Abstract

In this paper, we investigated the influence of changes in the initial micro-faceting induced by different Sb coverages on the structural properties of relaxed Ge films on Si(001). Two cases of surfactant-induced micro-faceted surfaces, exhibiting <110>- and <100>-oriented troughs for high and low Sb-coverage, respectively, were carefully prepared and 1 μm thick Ge layers were grown. Transmission electron microscopy and x-ray diffraction were used to explore the effects that differently oriented surfactant-induced micro-facets exert on the structural film properties, in particular with regard to the Ge/Si interface.

Organisation(s)

Institute of Electronic Materials and Devices

Type

Conference contribution

Pages

15-16

No. of pages

2

Publication date

01.12.2009

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

General Physics and Astronomy

Electronic version(s)

https://doi.org/10.1063/1.3295345 (Access: Open)