Influence of Sb induced surface faceting on structural properties of relaxed Ge films on Si(001)

verfasst von

T. F. Wietler, E. P. Rugeramigabo, E. Bugiel, K. R. Hofmann

Abstract

In this paper, we investigated the influence of changes in the initial micro-faceting induced by different Sb coverages on the structural properties of relaxed Ge films on Si(001). Two cases of surfactant-induced micro-faceted surfaces, exhibiting <110>- and <100>-oriented troughs for high and low Sb-coverage, respectively, were carefully prepared and 1 μm thick Ge layers were grown. Transmission electron microscopy and x-ray diffraction were used to explore the effects that differently oriented surfactant-induced micro-facets exert on the structural film properties, in particular with regard to the Ge/Si interface.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik

Typ

Aufsatz in Konferenzband

Seiten

15-16

Anzahl der Seiten

2

Publikationsdatum

01.12.2009

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (insg.)

Elektronische Version(en)

https://doi.org/10.1063/1.3295345 (Zugang: Offen)