Epitaxial growth of Gd₂O₃ on surfactant-mediated grown Ge films on Si(0 0 1) substrates

verfasst von

T. F. Wietler, A. Laha, E. Bugiel, M. Czernohorsky, R. Dargis, A. Fissel, H. J. Osten

Abstract

In this work, we investigated the epitaxial growth of Gd₂O₃ thin films on germanium layers grown by surfactant-mediated epitaxy on silicon (0 0 1) substrates. The influence of the lattice mismatch between Ge and Gd₂O₃ as well as the impact of the lower surface energy of Ge compared to Si on the growth process have been studied resulting in conditions for epitaxy of smooth Gd₂O₃ films without any interfacial layer on Ge. We determined the epitaxial relationship and the crystalline structure of these films using transmission electron microscopy and X-ray diffraction. The Gd₂O₃ layers grow in two orthogonal (0 1 1)-oriented domains of the cubic phase. They are relaxed and show structural perfection similar to that of Gd₂O₃ films grown on Si(0 0 1). No interfacial layer is observed between the Gd₂O₃ and Ge making this material combination particularly suitable for an application in high-mobility channel MOSFETs with equivalent oxide thickness below 1 nm.

Organisationseinheit(en)

Institut für Materialien und Bauelemente der Elektronik
Laboratorium f. Informationstechnologie

Typ

Artikel

Journal

Solid-State Electronics

Band

53

Seiten

833-836

Anzahl der Seiten

4

ISSN

0038-1101

Publikationsdatum

08.2009

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Elektrotechnik und Elektronik, Werkstoffchemie

Elektronische Version(en)

https://doi.org/10.1016/j.sse.2009.04.027 (Zugang: Geschlossen)