Influence of the number of double layers on the damage threshold of Al 2O3/SiO2 and LaF3/MgF2 mirrors at 248 nm
- verfasst von
- Eric Eva, Klaus R. Mann, Uwe B. Schallenberg, Norbert Kaiser, Rainer Henking, Detlev Ristau
- Abstract
KrF-laser induced damage thresholds (LIDT) of HR stacks were investigated as a function of the number of quarterwave layers. The findings were interpreted in terms of calorimetric absorption measurements and scatter defect density counts as well as an analysis of the standing wave electric field. Higher numbers of high-purity Al2O3/SiO2 layers resulted in enhanced LIDT by shielding the substrate surface increasingly well. Contrary to this, LIDT decreased with increasing numbers of e-beam evaporated LaF3/MgF2 layers. This was accompanied by elevated absorptance, defect density and conditionability at higher stack numbers.
- Externe Organisation(en)
-
Laser-Laboratorium Göttingen e.V. (LLG)
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF
Laser Zentrum Hannover e.V. (LZH)
- Typ
- Aufsatz in Konferenzband
- Seiten
- 499-510
- Anzahl der Seiten
- 12
- Publikationsdatum
- 27.05.1996
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Physik der kondensierten Materie, Angewandte Informatik, Angewandte Mathematik, Elektrotechnik und Elektronik
- Elektronische Version(en)
-
https://doi.org/10.1117/12.240365 (Zugang:
Geschlossen)
