Strain-induced doping and zero line mode at the fold of twisted Bernal-stacked bilayer graphene

authored by: Sung Ju Hong, Xiao Xiao, Dirk Wulferding, Christopher Belke, Peter Lemmens, Rolf J. Haug
Abstract: The folding of Bernal-stacked bilayer graphene leads to electronic devices that can be understood as combinations of a twisted double-bilayer graphene and a fold. In magnetotransport experiments contributions of the two different parts can be identified. For the twisted double-bilayer graphene Landau fan diagrams with satellite fans depending on twist angle are observed. The fold gives rise to a local minimum in conductance which does not shift with applied perpendicular magnetic field. Regardless of twist angle the fold favors electron doping attributed to compressive strain at the kink geometry. The curvature of the folded structure provides for a systematic explanation, which is also in agreement with the observed correlation between twist angle and interlayer distance. Finally, the appearance of the topological zero line mode formed at the fold is discussed.
Organisation(s): QuantumFrontiers
Institute of Solid State Physics
Institute of Microtechnology
Quantum Technologies
External Organisation(s): Technische Universität Braunschweig
Korea Basic Science Institute
Seoul National University
Type: Article
Journal: 2D Materials
Volume: 8
ISSN: 2053-1583
Publication date: 18.10.2021
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: General Chemistry, General Materials Science, Condensed Matter Physics, Mechanics of Materials, Mechanical Engineering
Electronic version(s): https://doi.org/10.1088/2053-1583/ac152e (Access: Open)

BibTeX

@article{90cd131721cb4c76bbe225729e0f46d4,
title = "Strain-induced doping and zero line mode at the fold of twisted Bernal-stacked bilayer graphene",
abstract = "The folding of Bernal-stacked bilayer graphene leads to electronic devices that can be understood as combinations of a twisted double-bilayer graphene and a fold. In magnetotransport experiments contributions of the two different parts can be identified. For the twisted double-bilayer graphene Landau fan diagrams with satellite fans depending on twist angle are observed. The fold gives rise to a local minimum in conductance which does not shift with applied perpendicular magnetic field. Regardless of twist angle the fold favors electron doping attributed to compressive strain at the kink geometry. The curvature of the folded structure provides for a systematic explanation, which is also in agreement with the observed correlation between twist angle and interlayer distance. Finally, the appearance of the topological zero line mode formed at the fold is discussed.",
keywords = "Bernal stacking, Folding, Strain-induced doping, Twisted double-bilayer graphene, Zero line mode",
author = "Hong, {Sung Ju} and Xiao Xiao and Dirk Wulferding and Christopher Belke and Peter Lemmens and Haug, {Rolf J.}",
note = "Funding Information: This work is supported by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany?s Excellence Strategy?EXC 2123 Quantum Frontiers?390837967 and within priority program SPP 2244 ?2DMP?, by the state of Lower Saxony via the School for Contacts in Nanosystems and Fundamentals of Physics and Metrology Initiative. Part of this study has been performed using facilities at the LNQE, Leibniz Universit?t Hannover, Germany. P L and D W acknowledge support from QUANOMET-NL4 and the Institute for Basic Science (IBS-R009-Y3).",
year = "2021",
month = oct,
day = "18",
doi = "10.1088/2053-1583/ac152e",
language = "English",
volume = "8",
journal = "2D Materials",
issn = "2053-1583",
publisher = "IOP Publishing Ltd.",
number = "4",
}