Overshoot Prevention in Monolithic GaN by Ultra-Low ESL Gate Loop Design Using Chip-Scale Capacitors and Gate Driver Pull-Up Path Tuning Technique

authored by: Niklas Deneke, Bernhard Wicht
Abstract: Despite monolithic integration of GaN gate drivers with the power stage, some parasitic gate loop inductance remains, including connections to off-chip decoupling capacitors. On-chip capacitors, however, complicate the gate loop design by adding another pole to the system. An LC-RC resonant tank replaces the conventional RLC model, which is insufficient. Ultra-low ESL decoupling using chip-scale silicon capacitors bonded directly to the GaN-IC is identified as most effective by measurements for PCB and bonded MLCC and SiCap gate loop decoupling. A voltage-tuning technique-based gate driver, implemented on a GaN-IC, is applied to adapt to the remaining loop inductance and reduce critical overshoot while ensuring fast switching.
Organisation(s): Institute of Microelectronic Systems
Type: Conference contribution
Pages: 2409-2414
No. of pages: 6
Publication date: 2024
Publication status: Published
Peer reviewed: Yes
ASJC Scopus subject areas: Electrical and Electronic Engineering
Electronic version(s): https://doi.org/10.1109/APEC48139.2024.10509192 (Access: Closed)

BibTeX

@inproceedings{75e18201b74243c18e8d04c2e6bbe751,
title = "Overshoot Prevention in Monolithic GaN by Ultra-Low ESL Gate Loop Design Using Chip-Scale Capacitors and Gate Driver Pull-Up Path Tuning Technique",
abstract = "Despite monolithic integration of GaN gate drivers with the power stage, some parasitic gate loop inductance remains, including connections to off-chip decoupling capacitors. On-chip capacitors, however, complicate the gate loop design by adding another pole to the system. An LC-RC resonant tank replaces the conventional RLC model, which is insufficient. Ultra-low ESL decoupling using chip-scale silicon capacitors bonded directly to the GaN-IC is identified as most effective by measurements for PCB and bonded MLCC and SiCap gate loop decoupling. A voltage-tuning technique-based gate driver, implemented on a GaN-IC, is applied to adapt to the remaining loop inductance and reduce critical overshoot while ensuring fast switching.",
keywords = "Decoupling, GaN-IC, Gate Driver, Gate Loop, MLCC, Monolithic GaN, SiCap",
author = "Niklas Deneke and Bernhard Wicht",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024 ; Conference date: 25-02-2024 Through 29-02-2024",
year = "2024",
doi = "10.1109/APEC48139.2024.10509192",
language = "English",
isbn = "979-8-3503-1665-0",
pages = "2409--2414",
booktitle = "2024 IEEE Applied Power Electronics Conference and Exposition",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",
}