Electrical Properties of Thin ZrSe3Films for Device Applications
- authored by
- Lars Thole, Christopher Belke, Sonja Locmelis, Peter Behrens, Rolf J. Haug
- Abstract
Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
- Organisation(s)
-
Institute of Solid State Physics
Institute of Inorganic Chemistry
Laboratory of Nano and Quantum Engineering
QuantumFrontiers
PhoenixD: Photonics, Optics, and Engineering - Innovation Across Disciplines
- Type
- Article
- Journal
- ACS Omega
- Volume
- 7
- Pages
- 39913-39916
- No. of pages
- 4
- Publication date
- 08.11.2022
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- General Chemistry, General Chemical Engineering
- Electronic version(s)
-
https://doi.org/10.1021/acsomega.2c04198 (Access:
Open)
