Imaging of oxide precipitates in silicon with ballistic phonons

authored by

W. Metzger, R. P. Huebener, R. J. Haug, H. U. Habermeier

Abstract

Ballistic phonons were generated at low temperatures in nearly single-crystalline silicon by scanning the specimen surface with an electron beam. At the opposite sample surface the ballistic phonons were detected with two small-area bolometers placed at different locations. For a Si specimen which had been annealed for 150 h at 1050°C, the ballistic phonon image contained fine structure which could be attributed to oxide precipitates. Comparing the phonon images obtained with the two bolometers, we concluded that the structural inhomogeneities affecting the ballistic phonon propagation were located far from the specimen surface scanned by the electron beam. With these experiments a new principle of three-dimensional tomography based on ballistic phonons has been demonstrated.

External Organisation(s)

University of Tübingen
Max Planck Institute for Solid State Research (MPI-FKF)

Type

Article

Journal

Applied physics letters

Volume

47

Pages

1051-1053

No. of pages

3

ISSN

0003-6951

Publication date

01.12.1985

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Electronic version(s)

https://doi.org/10.1063/1.96375 (Access: Unknown)