Coulomb blockade effects in Ag/Si(111)

The role of the wetting layer

authored by

Jedrzej Schmeidel, Herbert Pfnür, Christoph Tegenkamp

Abstract

Single and double barrier structures have been realized with Ag nanostructures grown on Si(111) in combination with scanning tunneling microscopy. The series connection of a Schottky (SB) and tunneling barrier mimics a double barrier structure showing Coulomb blockade oscillations as revealed by scanning tunneling spectroscopy (STS). Although the SB remains in presence of a Ag3×3 reconstruction, the dI/dV characteristic turns into a single barrier structure. The Ag reconstruction provides a sufficiently high electron mobility capturing intrinsic defects which shortens the resistance of the SB. These results show that vertical transport properties, as measured with STS, are not only controlled by the structure and the bonding on the atomic scale, but depend strongly on the lateral properties of the interface as well.

Organisation(s)

Institute of Solid State Physics

Type

Article

Journal

Physical Review B - Condensed Matter and Materials Physics

Volume

80

ISSN

1098-0121

Publication date

04.09.2009

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials, Condensed Matter Physics

Electronic version(s)

https://doi.org/10.1103/PhysRevB.80.115304 (Access: Unknown)