Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films
- verfasst von
- V. A. Volodin, T. T. Korchagina, J. Koch, B. N. Chichkov
- Abstract
Femtosecond laser treatments (Ti-sapphire laser, 800 nm wavelength, <30 fs pulse duration) were applied for crystallization of amorphous silicon nanoclusters in silicon-rich nitride films. The laser fluences needed for crystallization of the silicon nanoclusters were found for films of various non-stoichiometric parameters (SiNx:H, 0.6≤x<1.33). The effect of laser assisted formation of amorphous Si nanoclusters in SRN films with relatively low concentration of additional silicon atoms was observed. The developed approach can be used for the creation of dielectric films with semiconductor nanoclusters on non-refractory substrates.
- Externe Organisation(en)
-
RAS - Institute of Semiconductor Physics, Siberian Branch
Novosibirsk State University
Laser Zentrum Hannover e.V. (LZH)
- Typ
- Artikel
- Journal
- Physica E: Low-Dimensional Systems and Nanostructures
- Band
- 42
- Seiten
- 1820-1823
- Anzahl der Seiten
- 4
- ISSN
- 1386-9477
- Publikationsdatum
- 28.12.2009
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik, Physik der kondensierten Materie
- Elektronische Version(en)
-
https://doi.org/10.1016/j.physe.2009.12.034 (Zugang:
Unbekannt)
