Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride interface
- verfasst von
- Armin G. Aberle, Thomas Lauinger, Jan Schmidt, Rudolf Hezel
- Abstract
Experimental evidence is presented that the effective surface recombination velocity (Seff) at p-silicon surfaces passivated by silicon nitride films (fabricated in a plasma-enhanced chemical vapor deposition system) shows an injection-level dependence similar to the behavior of thermally oxidized silicon surfaces. Using the microwave-detected photoconductance decay method, injection-level dependent Seff measurements were taken on nitride-passivated p-silicon wafers of different resistivities (1.5-3000 Ω cm). The obtained Seff values also show that for low-resistivity substrates (≤2 Ω cm), nitride passivation is as effective as conventional oxide passivation (and even superior at low injection levels) and furthermore offers the advantage of a less pronounced injection-level dependence.
- Externe Organisation(en)
-
Institut für Solarenergieforschung GmbH (ISFH)
- Typ
- Artikel
- Journal
- Applied physics letters
- Band
- 66
- Seiten
- 2828
- Anzahl der Seiten
- 1
- ISSN
- 0003-6951
- Publikationsdatum
- 22.05.1995
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Physik und Astronomie (sonstige)
- Elektronische Version(en)
-
https://doi.org/10.1063/1.113443 (Zugang:
Geschlossen)
