Thermally activated dissipative conductivity in the fractional quantum Hall effect regime

verfasst von

S. I. Dorozhkin, M. O. Dorokhova, R. J. Haug, K. Von Klitzing, K. Ploog

Abstract

Experimental investigations of thermally activated dissipative conductivity σ_xx in the fractional quantum Hall effect at filling factors v=1/3 and near zero were performed with GaAs/AlGaAs heterojunction based field-effect transistors with an electronic channel. To within our accuracy of 10%, the pre-exponential factor measured for v= 1/3 is equal to 2e*2/h (e*=e/3 is the charge of the quasiparticles), the value expected for the case when the quasielectrons and quasiholes make the same contribution to the conductivity. The observed change in the temperature dependence of the conductivity when v deviates from 1/3 is associated with the change in the filling of the energy levels of the quasielectrons and quasiholes and indicates that there is no gap in the quasiparticle density of states averaged over the sample.

Externe Organisation(en)

RAS - Institute of Solid State Physics
Max-Planck-Institut für Festkörperforschung
Paul-Drude-Institut für Festkörperelektronik (PDI)

Typ

Artikel

Journal

JETP letters

Band

63

Seiten

76-82

Anzahl der Seiten

7

ISSN

0021-3640

Publikationsdatum

10.01.1996

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Physik und Astronomie (sonstige)

Elektronische Version(en)

https://doi.org/10.1134/1.566966 (Zugang: Unbekannt)