Optical in situ measurements of temperature and layer thickness in Si molecular beam epitaxy

verfasst von: Myeongcheol Kim, H. J. Thieme, G. Lippert, H. J. Osten
Abstract: We report on optical in situ measurements of temperature and thickness in silicon molecular beam epitaxy (MBE) by a combination of pyrometry and reflectometry. This method is able to respond to fast temperature changes on the wafer in real-time, and is sensitive enough to monitor even small temperature variations (less than 1°C), We investigate the influence of different MBE components and system operations on the wafer temperature, such as hot cells, electron beam evaporator and LN₂ cooling, etc. The in situ thickness measurements succeeded only for layers thicker than a quarter wavelength (> 60 nm). An attempt to measure the optical constants and layer thickness in real-time by fitting the oscillating reflectivity signal during SiGe layer deposition failed due to a poor signal-to-noise ratio, caused by wafer wobbling, scattered light from hot cells and other sources. The optical constants of different SiGe layers were determined after deposition.
Externe Organisation(en): Leibniz-Institut für innovative Mikroelektronik (IHP)
Typ: Artikel
Journal: Journal of crystal growth
Band: 169
Seiten: 681-688
Anzahl der Seiten: 8
ISSN: 0022-0248
Publikationsdatum: 02.12.1996
Publikationsstatus: Veröffentlicht
Peer-reviewed: Ja
ASJC Scopus Sachgebiete: Physik der kondensierten Materie, Anorganische Chemie, Werkstoffchemie
Elektronische Version(en): https://doi.org/10.1016/S0022-0248(96)00478-2 (Zugang: Geschlossen)

BibTeX

@article{9ec5b0658fb141a6b70961f6d6a0d145,
title = "Optical in situ measurements of temperature and layer thickness in Si molecular beam epitaxy",
abstract = "We report on optical in situ measurements of temperature and thickness in silicon molecular beam epitaxy (MBE) by a combination of pyrometry and reflectometry. This method is able to respond to fast temperature changes on the wafer in real-time, and is sensitive enough to monitor even small temperature variations (less than 1°C), We investigate the influence of different MBE components and system operations on the wafer temperature, such as hot cells, electron beam evaporator and LN2 cooling, etc. The in situ thickness measurements succeeded only for layers thicker than a quarter wavelength (> 60 nm). An attempt to measure the optical constants and layer thickness in real-time by fitting the oscillating reflectivity signal during SiGe layer deposition failed due to a poor signal-to-noise ratio, caused by wafer wobbling, scattered light from hot cells and other sources. The optical constants of different SiGe layers were determined after deposition.",
author = "Myeongcheol Kim and Thieme, {H. J.} and G. Lippert and Osten, {H. J.}",
year = "1996",
month = dec,
day = "2",
doi = "10.1016/S0022-0248(96)00478-2",
language = "English",
volume = "169",
pages = "681--688",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "4",
}